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Effect of Growth Pressure on Structural Properties of SiC Film Grown on Insulator by Utilizing Graphene as a Buffer Layer

Article info application/pdf eJournal

oleh Astuti, Budi , Abd Rahman, Shaharin Fadzli , Tanikawa, Masahiro , Mahmood, Mohamad Rusop , Yasui, Kanji , Manaf Hashim, Abdul

Terbitan	: Faculty of Science and Technology, State Islamic University Walisongo Central Java, 2015
Institusi	: Universitas Islam Negeri Walisongo Semarang
Gedung	:

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Lokasi	Repository	IOS Number
		IOS1189.article-476

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