Direct patterning of periodic semiconductor nanostructures using single-pulse nanosecond laser interference

Main Authors: Wang, Yun-Ran, Hopkinson, Mark
Format: Article eJournal
Bahasa: ang
Terbitan: , 2020
Subjects:
MBE
Online Access: https://zenodo.org/record/4106523
ctrlnum 4106523
fullrecord <?xml version="1.0"?> <dc schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"><creator>Wang, Yun-Ran</creator><creator>Hopkinson, Mark</creator><date>2020-10-19</date><description>We demonstrate an effective method for fabricating large area periodic two-dimensional semiconductor nanostructures by means of single-pulse laser interference. Utilizing a pulsed nanosecond laser with a wavelength of 355 nm, precisely ordered square arrays of nanoholes with a periodicity of 300 nm were successfully obtained on UV photoresist and also directly via a resist-free process onto semiconductor wafers. We show improved uniformity using a beam-shaping system consisting of cylindrical lenses with which we can demonstrate highly regular arrays over hundreds of square micrometers. We propose that our novel observation of direct pattern transfer to GaAs is due to local congruent evaporation and subsequent droplet etching of the surface. The results show that single-pulse interference can provide a rapid and highly efficient route for the realization of wide-area periodic nanostructures on semiconductors and potentially on other engineering materials.</description><identifier>https://zenodo.org/record/4106523</identifier><identifier>10.5281/zenodo.4106523</identifier><identifier>oai:zenodo.org:4106523</identifier><language>ang</language><relation>info:eu-repo/grantAgreement/EC/H2020/767285/</relation><relation>doi:10.5281/zenodo.4106522</relation><rights>info:eu-repo/semantics/openAccess</rights><rights>https://creativecommons.org/licenses/by/4.0/legalcode</rights><subject>Lithography, Nanostructuring, MBE, semiconductors, Quantum dots, epitaxy</subject><title>Direct patterning of periodic semiconductor nanostructures using single-pulse nanosecond laser interference</title><type>Journal:Article</type><type>Journal:Article</type><recordID>4106523</recordID></dc>
language ang
format Journal:Article
Journal
Journal:eJournal
author Wang, Yun-Ran
Hopkinson, Mark
title Direct patterning of periodic semiconductor nanostructures using single-pulse nanosecond laser interference
publishDate 2020
topic Lithography
Nanostructuring
MBE
semiconductors
Quantum dots
epitaxy
url https://zenodo.org/record/4106523
contents We demonstrate an effective method for fabricating large area periodic two-dimensional semiconductor nanostructures by means of single-pulse laser interference. Utilizing a pulsed nanosecond laser with a wavelength of 355 nm, precisely ordered square arrays of nanoholes with a periodicity of 300 nm were successfully obtained on UV photoresist and also directly via a resist-free process onto semiconductor wafers. We show improved uniformity using a beam-shaping system consisting of cylindrical lenses with which we can demonstrate highly regular arrays over hundreds of square micrometers. We propose that our novel observation of direct pattern transfer to GaAs is due to local congruent evaporation and subsequent droplet etching of the surface. The results show that single-pulse interference can provide a rapid and highly efficient route for the realization of wide-area periodic nanostructures on semiconductors and potentially on other engineering materials.
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