Effects of Variation of Quantum Well Numbers on Gain Characteristics of Type-I InGaAsP/InP Nano-heterostructure

Main Authors: Anjum, S. G.; Muslim University, K., Sandhya; Banasthali University, Khan, A. B.; Integral University, Khan, A. M.; Banasthali University, Siddiqui, M. J.; Muslim University, Alvi, P. A.; Banasthali University
Format: Article info application/pdf eJournal
Bahasa: eng
Terbitan: Institute of Advanced Engineering and Science , 2017
Subjects:
Online Access: http://journal.portalgaruda.org/index.php/EEI/article/view/638
http://journal.portalgaruda.org/index.php/EEI/article/view/638/477

Internet

http://journal.portalgaruda.org/index.php/EEI/article/view/638
http://journal.portalgaruda.org/index.php/EEI/article/view/638/477

Lokasi

Koleksi Bulletin of Electrical Engineering and Informatics
Gedung IAES Indonesia Section and Partners
Institusi IAES Indonesia Section and Partners
Kota KOTA YOGYAKARTA
Provinsi DAERAH ISTIMEWA YOGYAKARTA
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