Lokasi: N-Type Conductivity in Wurtzite Mn-Doped GaN thin Films Grown by Plasma Assisted MOCVD

Main Authors:	Budi Mulyanti; Department of Electrical Engineering Education, Universitas Pendidikan Indonesia, Bandung, Agus Subagio; Departement of Physics, Diponegoro University, Semarang, Edi Supriyanto; Departement of Physics, UNEJ, Jember, Heri Sutanto; Departement of Physics, Diponegoro University, Semarang, Fitri Suryani Arsyad; Departement of Physics, Sriwijaya University, Palembang, Pepen Arifin; Research Group on Electronic Material Physics, Faculty of Mathematics and Natural Sciences, Bandung Institute Technology, Maman Budiman; Research Group on Electronic Material Physics, Faculty of Mathematics and Natural Sciences, Bandung Institute Technology, Mohamad Barmawi; Research Group on Electronic Material Physics, Faculty of Mathematics and Natural Sciences, Bandung Institute Technology
Format:	Article application/pdf eJournal
Bahasa:	eng
Terbitan:	Institut Teknologi Bandung , 2009
Subjects:	N-type conductivity Wurtzite GaN:Mn PA MOCVD
Online Access:	http://journal.fmipa.itb.ac.id/jms/article/view/120

Koleksi	Jurnal Matematika & Sains
Gedung	Perpustakaan Institut Teknologi Bandung
Institusi	Institut Teknologi Bandung
Kota	KOTA BANDUNG
Provinsi	JAWA BARAT
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