Pengendapan ZnS menggunakan metode perendaman kimiawi: efek perlakuan Substrat
| ctrlnum |
30822 |
|---|---|
| fullrecord |
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<dc schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"><title>Pengendapan ZnS menggunakan metode perendaman kimiawi: efek perlakuan Substrat.
</title><creator>Hasan , Fuad</creator><subject>QD Chemistry</subject><description>Semikonduktor sulfida fotosensitif, ZnS, telah diendapkan diatas permukaan substrat gelas preparat sebagai film lapis tipis. Tujuan penelitian ini adalah menentukan efek perlakuan awal substrat terhadap karakteristik spektral
( (dA
lapis tipis sulfida yang dinyatakan dengan --121 --= ( -- 1 , A/1,w art, dan
cbtl, ex., l. ) dA At
Xg(exp) = Agaio• Sulfida diendapkan dan 0,1 M larutan ZnSO4 dengan metode perendaman kimiawi (CBD). Thiourea, (NH2)2CS, digunakan sebagai sumber ion sulfida. Pengendapan dilakukan dibawah pengaturan pH dengan mengontrol penambahan amonia. Amonia, NH4OH, juga bertindak sebagai sumber ligan. Sebelum digunakan, gelas preparat diberi perlakuan secara terpisah menggunakan larutan NaOH (gelas GN) dan larutan KOH (gelas GK). Padatan ZnS tidak berhasil mengendap dan melapis dengan baik diatas permukaan gelas. Telah didapatkan bahwa film lapis tipis endapan ZnS tidak homogen dan spektra yang dihasilkan menyimpang jauh dari harapan. Hasil eksperimen menunjukkan bahwa lapisan endapan ZnS memberikan karakteristik celah pita pada 371-384 nm untuk gelas GN dan 350-360 nm untuk gelas GK. Literatur melaporkan karakteristik celah pita pada 310-335 nm.
The photosensitive sulfide semiconductor, ZnS, has been deposited on microscope glass substrate surface as thin film layer. The aim of our laboratory experiment is determining the effect of substrate pre-treatment on spectral
clA
charateristic of sulfide thin film, which defined as (—dA =(— I ,
exp lit
A/lexp = dart, dan 4(exp) = A•glit). The sulfide was deposited from 0.1 M ZnSO4
solution by means of chemical bath deposition (CBD) method. Thiourea, (NH2)2CS, was used as sulfide ion source. The bath was operated under pH adjustment by controlled ammonia addition. Ammonia, NH4OH, acts also as ligand source. The glass substrate were separately pre-treated using NaOH solution (as GN glass) and KOH one (as GK glass) before used. The solid ZnS could unsuccessfully deposit on and coated the glass surface. It is obtained that ZnS was deposited as inhomogeneous thick film layers and resulting in spectra digress far from the expected pattern. Experimental results show that ZnS deposit layers give characteristic band gap at 371-384 urn for GN glass and 350-360 urn for GK glass. Literature reported 310-335 urn

</description><date>2001</date><type>Thesis:Thesis</type><type>PeerReview:NonPeerReviewed</type><type>File:application/pdf</type><identifier>http://eprints.undip.ac.id/30822/1/233k2001.pdf</identifier><type>File:application/pdf</type><identifier>http://eprints.undip.ac.id/30822/2/233k2001_cover.pdf</identifier><type>File:application/pdf</type><identifier>http://eprints.undip.ac.id/30822/3/233k2001_summary.pdf</identifier><type>File:application/pdf</type><identifier>http://eprints.undip.ac.id/30822/4/233k2001_preliminary.pdf</identifier><type>File:application/pdf</type><identifier>http://eprints.undip.ac.id/30822/5/233k2001_chapter_I.pdf</identifier><type>File:application/pdf</type><identifier>http://eprints.undip.ac.id/30822/6/233k2001_chapter_II.pdf</identifier><type>File:application/pdf</type><identifier>http://eprints.undip.ac.id/30822/7/233k2001_chapter_III.pdf</identifier><type>File:application/pdf</type><identifier>http://eprints.undip.ac.id/30822/8/233k2001_chapter_IV.pdf</identifier><type>File:application/pdf</type><identifier>http://eprints.undip.ac.id/30822/9/233k2001_chapter_V.pdf</identifier><type>File:application/pdf</type><identifier>http://eprints.undip.ac.id/30822/10/233k2001_reference.pdf</identifier><type>File:application/pdf</type><identifier>http://eprints.undip.ac.id/30822/11/233k2001_attachment.pdf</identifier><identifier>Hasan , Fuad (2001) Pengendapan ZnS menggunakan metode perendaman kimiawi: efek perlakuan Substrat. Undergraduate thesis, FMIPA UNDIP.</identifier><relation>http://eprints.undip.ac.id/30822/</relation><recordID>30822</recordID></dc>
|
| format |
Thesis:Thesis Thesis PeerReview:NonPeerReviewed PeerReview File:application/pdf File |
| author |
Hasan , Fuad |
| title |
Pengendapan ZnS menggunakan metode perendaman kimiawi: efek perlakuan Substrat |
| publishDate |
2001 |
| topic |
QD Chemistry |
| url |
http://eprints.undip.ac.id/30822/1/233k2001.pdf http://eprints.undip.ac.id/30822/2/233k2001_cover.pdf http://eprints.undip.ac.id/30822/3/233k2001_summary.pdf http://eprints.undip.ac.id/30822/4/233k2001_preliminary.pdf http://eprints.undip.ac.id/30822/5/233k2001_chapter_I.pdf http://eprints.undip.ac.id/30822/6/233k2001_chapter_II.pdf http://eprints.undip.ac.id/30822/7/233k2001_chapter_III.pdf http://eprints.undip.ac.id/30822/8/233k2001_chapter_IV.pdf http://eprints.undip.ac.id/30822/9/233k2001_chapter_V.pdf http://eprints.undip.ac.id/30822/10/233k2001_reference.pdf http://eprints.undip.ac.id/30822/11/233k2001_attachment.pdf http://eprints.undip.ac.id/30822/ |
| contents |
Semikonduktor sulfida fotosensitif, ZnS, telah diendapkan diatas permukaan substrat gelas preparat sebagai film lapis tipis. Tujuan penelitian ini adalah menentukan efek perlakuan awal substrat terhadap karakteristik spektral
( (dA
lapis tipis sulfida yang dinyatakan dengan --121 --= ( -- 1 , A/1,w art, dan
cbtl, ex., l. ) dA At
Xg(exp) = Agaio• Sulfida diendapkan dan 0,1 M larutan ZnSO4 dengan metode perendaman kimiawi (CBD). Thiourea, (NH2)2CS, digunakan sebagai sumber ion sulfida. Pengendapan dilakukan dibawah pengaturan pH dengan mengontrol penambahan amonia. Amonia, NH4OH, juga bertindak sebagai sumber ligan. Sebelum digunakan, gelas preparat diberi perlakuan secara terpisah menggunakan larutan NaOH (gelas GN) dan larutan KOH (gelas GK). Padatan ZnS tidak berhasil mengendap dan melapis dengan baik diatas permukaan gelas. Telah didapatkan bahwa film lapis tipis endapan ZnS tidak homogen dan spektra yang dihasilkan menyimpang jauh dari harapan. Hasil eksperimen menunjukkan bahwa lapisan endapan ZnS memberikan karakteristik celah pita pada 371-384 nm untuk gelas GN dan 350-360 nm untuk gelas GK. Literatur melaporkan karakteristik celah pita pada 310-335 nm.
The photosensitive sulfide semiconductor, ZnS, has been deposited on microscope glass substrate surface as thin film layer. The aim of our laboratory experiment is determining the effect of substrate pre-treatment on spectral
clA
charateristic of sulfide thin film, which defined as (—dA =(— I ,
exp lit
A/lexp = dart, dan 4(exp) = A•glit). The sulfide was deposited from 0.1 M ZnSO4
solution by means of chemical bath deposition (CBD) method. Thiourea, (NH2)2CS, was used as sulfide ion source. The bath was operated under pH adjustment by controlled ammonia addition. Ammonia, NH4OH, acts also as ligand source. The glass substrate were separately pre-treated using NaOH solution (as GN glass) and KOH one (as GK glass) before used. The solid ZnS could unsuccessfully deposit on and coated the glass surface. It is obtained that ZnS was deposited as inhomogeneous thick film layers and resulting in spectra digress far from the expected pattern. Experimental results show that ZnS deposit layers give characteristic band gap at 371-384 urn for GN glass and 350-360 urn for GK glass. Literature reported 310-335 urn
|
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IOS2852.30822 |
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Universitas Diponegoro |
| institution_id |
69 |
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library:university library |
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Perpustakaan Universitas Diponegoro |
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485 |
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Diponegoro University Institutional Repository |
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2852 |
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SEMARANG |
| province |
JAWA TENGAH |
| repoId |
IOS2852 |
| first_indexed |
2016-09-15T18:22:25Z |
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2016-09-22T21:08:10Z |
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dc |
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1683116279203889152 |
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17.610611 |