A Comparative Study on Optical Characteristics of InGaAsP QW Heterostructures of Type-I and Type-II Band Alignments
| Main Authors: | Bhardwaj, Garima; Banasthali University, K., Sandhya; Banasthali University, Dolia, Richa; Banasthali University, Abu-Samak, M.; Al-Hussein Bin Talal University, Kumar, Shalendra; Amity School of Applied Sciences, A. Alvi, P.; Banasthali University |
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| Other Authors: | Nil |
| Format: | Article Quantum Mechanical Approach info application/pdf eJournal |
| Bahasa: | eng |
| Terbitan: |
Institute of Advanced Engineering and Science
, 2018
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| Subjects: | |
| Online Access: |
http://journal.portalgaruda.org/index.php/EEI/article/view/872 http://journal.portalgaruda.org/index.php/EEI/article/view/872/519 |
Daftar Isi:
- In this paper, we have configured InGaAsP QW (quantum well) heterostructures of type-I and type-II band alignments and simulated their optical characteristics by solving 6 x 6 Kohn-Luttinger Hamiltonian Matrix. According to the simulation results, the InGaAsP QW heterostructure of type-I band alignment has been found to show peak optical gain (TE mode) of the order of~3600/cm at the transition wavelength~1.40 μm; while of type-II band alignment has achieved the peak gain (TE mode) of the order of~7800/cm at the wavelength of~1.85 μm (eye safe region). Thus, both of the heterostructures can be utilized in designing of opto-or photonic devices for the emission of radiations in NIR (near infrared region) but form the high gain point of view, the InGaAsP of type-II band alignment can be more preferred.