Cover Image

Dynamic Variation in Nano-Scale CMOS SRAM Cells Due to LF/RTS Noise and Threshold Voltage

Main Authors: M. Fadlallah, G. Ghibaudo, C. G. Theodorou
Format: Article
Bahasa: eng
Terbitan: , 2018
Subjects:
Low-frequency noise
Random Telegraph Noise
Dynamic Variation
SRRV
Online Access: https://zenodo.org/record/1317382
ctrlnum 1317382
fullrecord <?xml version="1.0"?> <dc schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"><creator>M. Fadlallah</creator><creator>G. Ghibaudo</creator><creator>C. G. Theodorou</creator><date>2018-06-04</date><description>The dynamic variation in memory devices such as the Static Random Access Memory can give errors in read or write operations. In this paper, the effect of low-frequency and random telegraph noise on the dynamic variation of one SRAM cell is detailed. The effect on circuit noise, speed, and length of time of processing is examined, using the Supply Read Retention Voltage and the Read Static Noise Margin. New test run methods are also developed. The obtained results simulation shows the importance of noise caused by dynamic variation, and the impact of Random Telegraph noise on SRAM variability is examined by evaluating the statistical distributions of Random Telegraph noise amplitude in the pull-up, pull-down. The threshold voltage mismatch between neighboring cell transistors due to intrinsic fluctuations typically contributes to larger reductions in static noise margin. Also the contribution of each of the SRAM transistor to total dynamic variation has been identified.</description><identifier>https://zenodo.org/record/1317382</identifier><identifier>10.5281/zenodo.1317382</identifier><identifier>oai:zenodo.org:1317382</identifier><language>eng</language><relation>doi:10.5281/zenodo.1317381</relation><rights>info:eu-repo/semantics/openAccess</rights><rights>https://creativecommons.org/licenses/by/4.0/legalcode</rights><source>International Journal of Electrical, Electronic and Communication Sciences 11.0(7)</source><subject>Low-frequency noise</subject><subject>Random Telegraph Noise</subject><subject>Dynamic Variation</subject><subject>SRRV.</subject><title>Dynamic Variation in Nano-Scale CMOS SRAM Cells Due to LF/RTS Noise and Threshold Voltage</title><type>Journal:Article</type><type>Journal:Article</type><recordID>1317382</recordID></dc>
language eng
format Journal:Article
Journal
author M. Fadlallah
G. Ghibaudo
C. G. Theodorou
title Dynamic Variation in Nano-Scale CMOS SRAM Cells Due to LF/RTS Noise and Threshold Voltage
publishDate 2018
topic Low-frequency noise
Random Telegraph Noise
Dynamic Variation
SRRV
url https://zenodo.org/record/1317382
contents The dynamic variation in memory devices such as the Static Random Access Memory can give errors in read or write operations. In this paper, the effect of low-frequency and random telegraph noise on the dynamic variation of one SRAM cell is detailed. The effect on circuit noise, speed, and length of time of processing is examined, using the Supply Read Retention Voltage and the Read Static Noise Margin. New test run methods are also developed. The obtained results simulation shows the importance of noise caused by dynamic variation, and the impact of Random Telegraph noise on SRAM variability is examined by evaluating the statistical distributions of Random Telegraph noise amplitude in the pull-up, pull-down. The threshold voltage mismatch between neighboring cell transistors due to intrinsic fluctuations typically contributes to larger reductions in static noise margin. Also the contribution of each of the SRAM transistor to total dynamic variation has been identified.
id IOS16997.1317382
institution DEFAULT
institution_type library:public
library
library DEFAULT
collection DEFAULT
city DEFAULT
province DEFAULT
repoId IOS16997
first_indexed 2022-06-06T06:18:44Z
last_indexed 2022-06-06T06:18:44Z
recordtype dc
merged_child_boolean 1
_version_ 1739485637574131712
score 17.607244

Lihat Juga