MOdelling DAta providing a description for Near-field Excited Semiconductor Structure simulated in project MMAMA
Main Authors: | Smajic, Jasmin, Celuch, Malgorzata, Kienberger, Ferry |
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Format: | Report eJournal |
Terbitan: |
, 2019
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Online Access: |
https://zenodo.org/record/2577307 |
ctrlnum |
2577307 |
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fullrecord |
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<dc schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"><creator>Smajic, Jasmin</creator><creator>Celuch, Malgorzata</creator><creator>Kienberger, Ferry</creator><date>2019-02-25</date><description>The following document provides a modelling workflow for simulating a sharp metallic tip in contact with a semiconductor. The covered frequency range is 1-100 GHz and the covered wire-tip diameter is 5 nm - 100 nm while the other end of the wire has a diameter of 0.5 mm. The output of the simulation are the electromagnetic fields, S-parameters and charge carrier density and velocity.</description><identifier>https://zenodo.org/record/2577307</identifier><identifier>10.5281/zenodo.2577307</identifier><identifier>oai:zenodo.org:2577307</identifier><relation>info:eu-repo/grantAgreement/EC/H2020/761036/</relation><relation>doi:10.5281/zenodo.2577306</relation><relation>url:https://zenodo.org/communities/mmama-h2020</relation><rights>info:eu-repo/semantics/openAccess</rights><rights>https://creativecommons.org/licenses/by/4.0/legalcode</rights><title>MOdelling DAta providing a description for Near-field Excited Semiconductor Structure simulated in project MMAMA</title><type>Report:Report</type><type>Report:Report</type><recordID>2577307</recordID></dc>
|
format |
Report:Report Report Journal:eJournal Journal |
author |
Smajic, Jasmin Celuch, Malgorzata Kienberger, Ferry |
title |
MOdelling DAta providing a description for Near-field Excited Semiconductor Structure simulated in project MMAMA |
publishDate |
2019 |
url |
https://zenodo.org/record/2577307 |
contents |
The following document provides a modelling workflow for simulating a sharp metallic tip in contact with a semiconductor. The covered frequency range is 1-100 GHz and the covered wire-tip diameter is 5 nm - 100 nm while the other end of the wire has a diameter of 0.5 mm. The output of the simulation are the electromagnetic fields, S-parameters and charge carrier density and velocity. |
id |
IOS17403.2577307 |
institution |
Universitas PGRI Palembang |
institution_id |
189 |
institution_type |
library:university library |
library |
Perpustakaan Universitas PGRI Palembang |
library_id |
587 |
collection |
Marga Life in South Sumatra in the Past: Puyang Concept Sacrificed and Demythosized |
repository_id |
17403 |
city |
KOTA PALEMBANG |
province |
SUMATERA SELATAN |
repoId |
IOS17403 |
first_indexed |
2022-07-26T01:18:25Z |
last_indexed |
2022-07-26T01:18:25Z |
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dc |
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1739406383783084032 |
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17.607244 |