MOdelling DAta providing a description for Near-field Excited Semiconductor Structure simulated in project MMAMA
| Main Authors: | Smajic, Jasmin, Celuch, Malgorzata, Kienberger, Ferry |
|---|---|
| Format: | Report eJournal |
| Terbitan: |
, 2019
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| Online Access: |
https://zenodo.org/record/2577307 |
Daftar Isi:
- The following document provides a modelling workflow for simulating a sharp metallic tip in contact with a semiconductor. The covered frequency range is 1-100 GHz and the covered wire-tip diameter is 5 nm - 100 nm while the other end of the wire has a diameter of 0.5 mm. The output of the simulation are the electromagnetic fields, S-parameters and charge carrier density and velocity.